About SMART¶

SMART (Simple Model for ALD Reaction and Transport) is a software developed by the Atomic Layer Deposition group at Argonne National Laboratory. Its aim is to provide a tool to understand the interplay between surface reaction and precursor transport during Atomic Layer Deposition, and how this translates into coverage profiles both in reactors and nanostructures.

SMART comes in two flavors:

• The basic interface comprises two uncoupled models, one at the reactor and another at the feature scale.
• The advanced interface incorporates more features, including the possibility to load experimental data, the presence of an overimposed CVD component, and a much faster model at the reactor scale in the plug-flow approximation, which allows the fitting of experimental profiles to extract effective reaction probabilities.

SMART is based on the following publications:

• A. Yanguas-Gil and J. W. Elam, Simple model for atomic layer deposition precursor reaction and transport, Journal of Vacuum Science and Technology A 30, 01A159 (2012). [10.1116/1.3670396]
• A. Yanguas-Gil and J. W. Elam, Self-limited reaction-diffusion in nanostructured substrates: surface coverage dynamics and analytic approximations to ALD saturation times, Chemical Vapor Deposition 18, 46 (2012). [10.1002/cvde.201106938]

SMART has been developed by Angel Yanguas-Gil and Jeffrey W. Elam, two Argonne staff scientists from Energy Systems Division. Elam is the leader of Argonne’s Atomic Layer Deposition group.